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W3HG2128M64EEU665D4ISG

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W3HG2128M64EEU665D4ISG

DDR DRAM Module, 256MX64, 0.45ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation W3HG2128M64EEU665D4ISG is a DDR DRAM module featuring a 256M x 64 memory organization. This component operates synchronously with a maximum access time of 0.45ns and utilizes CMOS technology. It supports multi-bank page burst access modes and includes auto/self-refresh capabilities. The module is designed for a supply voltage range of 1.70V to 1.90V, with a nominal operating voltage of 1.8V. Operating temperatures span from -40.0°C to 85.0°C. This 200-terminal component, packaged in a rectangular DIMM form factor, is suitable for applications in high-performance computing, networking infrastructure, and industrial automation.

Additional Information

Series: W3HG2128M64RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeMULTI BANK PAGE BURST
Access_Time_Max0.4500000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N200
Memory_Density17179869184.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization256MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals200
Number_of_Words268435456.0000000000000000
Number_of_Words_Code256M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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