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W3HG2128M64EEU534D4ISG

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W3HG2128M64EEU534D4ISG

DDR DRAM Module, 256MX64, 0.5ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation W3HG2128M64 is a DDR DRAM Module with a memory organization of 256M x 64 bits, providing a total density of 17.18 Gbits. This component operates in synchronous mode with an access time of 0.5ns and utilizes CMOS technology. Key features include multi-bank page burst access, auto and self-refresh capabilities, and a nominal supply voltage of 1.8V, with a range of 1.7V to 1.9V. The module is designed for operation across an industrial temperature range of -40°C to +85°C. This component is suitable for applications in industrial automation, telecommunications, and networking infrastructure where high-speed memory is critical. The W3HG2128M64 series component is packaged in a 200-terminal DIMM.

Additional Information

Series: W3HG2128M64RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeMULTI BANK PAGE BURST
Access_Time_Max0.5000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N200
Memory_Density17179869184.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization256MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals200
Number_of_Words268435456.0000000000000000
Number_of_Words_Code256M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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