W3HG2128M64EEU403XD4MG
Synchronous DRAM Module, 256MX8, 0.6ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation W3HG2128M64 series synchronous DRAM module, part number W3HG2128M64EEU403XD4MG, offers a 256M x 8 memory organization with a maximum access time of 0.6ns. This CMOS component utilizes a dual bank page burst access mode and supports auto/self refresh functionality. The module operates synchronously, with a nominal supply voltage of 1.8V, ranging from 1.7V to 1.9V. Its 200-terminal package is designed for non-surface mount applications. This device is suitable for demanding applications across various industries requiring high-speed memory solutions.
Additional Information
Series: W3HG2128M64RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 3.8000 |
| Technology | CMOS |
| Length | 67.6000 |
| Access_Mode | DUAL BANK PAGE BURST |
| Access_Time_Max | 0.6000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N200 |
| Memory_Density | 2147483648.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 256MX8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 200 |
| Number_of_Words | 268435456.0000000000000000 |
| Number_of_Words_Code | 256M |
| Operating_Mode | Synchronous |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Seated_Height_Max | 30.0000 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 1.90000 |
| Supply_Voltage_Min | 1.70000 |
| Supply_Voltage_Nom | 1.8 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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