Home

Products

Integrated Circuits (ICs)

Memory

DRAMs

W3HG2128M64EEU403D6IGG

Banner
productimage

W3HG2128M64EEU403D6IGG

DDR DRAM Module, 256MX64, 0.6ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

Quality Control: Learn More

The Microsemi Corporation W3HG2128M64 is a DDR DRAM module with a memory organization of 256M x 64, providing a total density of 17.18 Gb. This component operates with a synchronous, four-bank page burst access mode, offering a maximum access time of 0.6 ns. It features auto and self-refresh capabilities and is built on CMOS technology. The module operates within a temperature range of -40°C to 85°C and requires a supply voltage between 1.70V and 1.90V, with a nominal of 1.8V. This component is commonly utilized in high-performance computing, networking infrastructure, and embedded systems requiring substantial memory bandwidth and capacity. The package style is a 240-terminal DIMM.

Additional Information

Series: W3HG2128M64RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max0.6000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N240
Memory_Density17179869184.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization256MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals240
Number_of_Words268435456.0000000000000000
Number_of_Words_Code256M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
W3HG2128M64EEU665D4ISG

DDR DRAM Module, 256MX64, 0.45ns, CMOS

product image
W3HG2128M64EEU806D6IGG

DDR DRAM Module, 256MX64, CMOS

product image
W3HG2128M64EEU534D6IGG

DDR DRAM Module, 256MX64, 0.5ns, CMOS