W3HG128M72AEF806F1XXG
DDR DRAM Module, 128MX72, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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The Microsemi Corporation W3HG128M72AEF806F1XXG is a DDR DRAM module featuring a 128Mx72 organization and CMOS technology. This component operates in synchronous mode with a dual bank page burst access mode. It supports auto and self-refresh functionalities. The module is packaged as a 240-terminal DIMM and is designed for applications requiring high-speed data storage and retrieval. Its memory density is 9663676416 bits. This component is commonly utilized in telecommunications, networking infrastructure, and high-performance computing systems. The module operates within a supply voltage range of 1.70V to 1.90V, with a nominal voltage of 1.8V.
Additional Information
Series: W3HG128M72RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N240 |
| Memory_Density | 9663676416.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 128MX72 |
| Memory_Width | 72 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 240 |
| Number_of_Words | 134217728.0000000000000000 |
| Number_of_Words_Code | 128M |
| Operating_Mode | Synchronous |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 1.90000 |
| Supply_Voltage_Min | 1.70000 |
| Supply_Voltage_Nom | 1.8 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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