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W3HG128M72AEF806F1SCG

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W3HG128M72AEF806F1SCG

DDR DRAM Module, 256MX4, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation W3HG128M72AEF806F1SCG is a 1Gbit DDR DRAM Module from the W3HG128M72 series. This CMOS component features a memory organization of 256M x 4, providing a data width of 4 bits. It operates in synchronous mode with a dual bank page burst access mode and incorporates self-contained refresh functionality. The module supports a supply voltage range of 1.70V to 1.90V, with a nominal voltage of 1.8V, and operates within a temperature range of 0°C to 85°C. Its design is suitable for applications in high-performance computing, networking infrastructure, and industrial automation where robust memory solutions are critical. The component utilizes a 240-terminal DIMM package with a terminal pitch of 1.00mm.

Additional Information

Series: W3HG128M72RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width7.1400
TechnologyCMOS
Length133.3500
Access_ModeDUAL BANK PAGE BURST
Additional_FeatureSELF CONTAINED REFRESH; WD-MAX
JESD_30_CodeR-XDMA-N240
Memory_Density1073741824.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization256MX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals240
Number_of_Words268435456.0000000000000000
Number_of_Words_Code256M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Seated_Height_Max30.5000
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_Pitch1.000
Terminal_PositionDual

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