W3HG128M72AEF806F1MBG
DDR DRAM Module, 256MX4, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation W3HG128M72AEF806F1MBG is a 1.7V to 1.9V DDR DRAM Module featuring a 256M x 4 memory organization. This CMOS component operates synchronously with a dual bank page burst access mode and supports self-contained refresh. The module's substantial 1,073,741,824-bit (1 Gbit) density is organized into 268,435,456 words, each 4 bits wide. Operating within a temperature range of 0°C to 85°C, this microelectronic assembly is suitable for demanding applications in sectors such as aerospace, defense, and industrial automation. The W3HG128M72 series component adheres to JESD-30 Code R-XDMA-N240 specifications and is packaged as a 240-terminal DIMM.
Additional Information
Series: W3HG128M72RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 7.1400 |
| Technology | CMOS |
| Length | 133.3500 |
| Access_Mode | DUAL BANK PAGE BURST |
| Additional_Feature | SELF CONTAINED REFRESH; WD-MAX |
| JESD_30_Code | R-XDMA-N240 |
| Memory_Density | 1073741824.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 256MX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 240 |
| Number_of_Words | 268435456.0000000000000000 |
| Number_of_Words_Code | 256M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Seated_Height_Max | 30.5000 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 1.90000 |
| Supply_Voltage_Min | 1.70000 |
| Supply_Voltage_Nom | 1.8 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Pitch | 1.000 |
| Terminal_Position | Dual |
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