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W3HG128M72AEF534F1GCG

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W3HG128M72AEF534F1GCG

DDR DRAM Module, 256MX4, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation W3HG128M72AEF534F1GCG is a DDR DRAM module from the W3HG128M72 series, featuring a 256Mx4 memory organization and CMOS technology. This component offers a substantial memory density of 1073741824 bits and operates in synchronous mode. Key features include self-contained refresh capabilities and a WD-MAX specification, supporting dual bank page burst access. Designed for demanding applications, this module operates within a temperature range of 0°C to 85°C, with a nominal supply voltage of 1.8V, extendable up to 1.9V. The package style is a microelectronic assembly, specifically a DIMM with 240 terminals. This component is utilized in industries requiring high-performance memory solutions.

Additional Information

Series: W3HG128M72RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width7.1400
TechnologyCMOS
Length133.3500
Access_ModeDUAL BANK PAGE BURST
Additional_FeatureSELF CONTAINED REFRESH; WD-MAX
JESD_30_CodeR-XDMA-N240
Memory_Density1073741824.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization256MX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals240
Number_of_Words268435456.0000000000000000
Number_of_Words_Code256M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Seated_Height_Max30.5000
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_Pitch1.000
Terminal_PositionDual

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