W3H64M72E-SB
DDR2 DRAM, 64MX72, CMOS, PBGA208Manufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation W3H64M72E-SB is a DDR2 DRAM component from the W3H64M72 series. This CMOS memory device features a 64M x 72 organization, providing a total density of 4.75 Gigabits. It operates synchronously with a 1.8V nominal supply voltage, supporting a range of 1.70V to 1.90V. The component supports multi-bank page burst access modes and includes auto/self-refresh functionalities. Packaged in a 208-ball PBGA (Plastic Ball Grid Array) with a rectangular shape and bottom terminal balls, it is designed for surface mounting. This memory solution is suitable for applications requiring high-speed data buffering and storage in sectors such as telecommunications and industrial computing.
Additional Information
Series: W3H64M72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | MULTI BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-PBGA-B208 |
| Memory_Density | 4831838208.0000000000000000 |
| Memory_IC_Type | DDR2 DRAM |
| Memory_Organization | 64MX72 |
| Memory_Width | 72 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 208 |
| Number_of_Words | 67108864.0000000000000000 |
| Number_of_Words_Code | 64M |
| Operating_Mode | Synchronous |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 1.90000 |
| Supply_Voltage_Min | 1.70000 |
| Supply_Voltage_Nom | 1.8 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Position | Bottom |
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