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W3H64M72E-667SBC

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W3H64M72E-667SBC

DDR2 DRAM, 64MX72, 0.5ns, CMOS, PBGA208

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation W3H64M72E-667SBC is a DDR2 DRAM component from the W3H64M72 series. This device offers a memory density of 4Gb with a 64Mx72 organization, delivering a 72-bit data width. It operates with a maximum clock frequency of 333 MHz and features a fast 0.5ns access time. Designed for synchronous operation, it supports multi-bank page burst access modes and includes auto/self-refresh capabilities with 8192 refresh cycles. The component utilizes CMOS technology and is housed in a 208-ball PBGA (R-PBGA-B208) package with a 1.00mm terminal pitch. Operating within a temperature range of 0°C to 70°C, it requires a supply voltage between 1.7V and 1.9V, with a nominal 1.8V. This surface-mount component is suitable for applications in networking, telecommunications, and industrial automation.

Additional Information

Series: W3H64M72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeMULTI BANK PAGE BURST
Access_Time_Max0.5000000000000000
Additional_FeatureAUTO/SELF REFRESH
Clock_Frequency_Max333.00000
I_O_TypeCOMMON
JESD_30_CodeR-PBGA-B208
Memory_Density4831838208.0000000000000000
Memory_IC_TypeDDR2 DRAM
Memory_Organization64MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals208
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_Equivalence_CodeBGA208,11X19,40
Package_ShapeRectangular
Package_StyleGRID ARRAY
Refresh_Cycles8192
Self_RefreshYes
Supply_Current_Max2200.000000000000000
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountYes
Terminal_FormBall
Terminal_Pitch1.000
Terminal_PositionBottom

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