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W3H64M72E-533SBI

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W3H64M72E-533SBI

DDR2 DRAM, 64MX72, 0.5ns, CMOS, PBGA208

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation W3H64M72E-533SBI is a DDR2 DRAM component with a memory organization of 64M x 72. This synchronous memory device operates with a maximum clock frequency of 267 MHz and features an access time of 0.5 ns. It supports multi-bank page burst access modes and incorporates auto/self-refresh functionality. The W3H64M72E-533SBI utilizes CMOS technology and is housed in a 208-ball PBGA package (R-PBGA-B208) with a 1.00 mm terminal pitch. Operating within a temperature range of -40°C to 85°C, this component is suitable for applications requiring high-speed data storage, including networking infrastructure, industrial automation, and high-performance computing systems. The component has a nominal supply voltage of 1.8V, with a maximum of 1.9V.

Additional Information

Series: W3H64M72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeMULTI BANK PAGE BURST
Access_Time_Max0.5000000000000000
Additional_FeatureAUTO/SELF REFRESH
Clock_Frequency_Max267.00000
I_O_TypeCOMMON
JESD_30_CodeR-PBGA-B208
Memory_Density4831838208.0000000000000000
Memory_IC_TypeDDR2 DRAM
Memory_Organization64MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals208
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_Equivalence_CodeBGA208,11X19,40
Package_ShapeRectangular
Package_StyleGRID ARRAY
Refresh_Cycles8192
Self_RefreshYes
Supply_Current_Max1750.000000000000000
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountYes
Terminal_FormBall
Terminal_Pitch1.000
Terminal_PositionBottom

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