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W3H64M72E-400SBMF

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W3H64M72E-400SBMF

DDR2 DRAM, 64MX72, CMOS, PBGA208

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation W3H64M72E-400SBMF is a DDR2 DRAM component from the W3H64M72 series. This device offers a memory organization of 64M x 72 bits, resulting in a total memory density of 4.5 Gigabit. It operates in synchronous mode with a multi-bank page burst access mode and supports auto refresh functionality. The component is manufactured using CMOS technology and is housed in a 208-ball PBGA (Plastic Ball Grid Array) package. It features a supply voltage range of 1.70V to 1.90V, with a nominal voltage of 1.8V. Operating across an extended temperature range from -55°C to +125°C, this surface-mount component is engineered for demanding applications, including high-performance computing, networking infrastructure, and industrial control systems.

Additional Information

Series: W3H64M72RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeMULTI BANK PAGE BURST
Additional_FeatureAUTO REFRESH
JESD_30_CodeR-PBGA-B208
Memory_Density4831838208.0000000000000000
Memory_IC_TypeDDR2 DRAM
Memory_Organization64MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals208
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-55.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_ShapeRectangular
Package_StyleGRID ARRAY
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountYes
Terminal_FormBall
Terminal_PositionBottom

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