W3H64M72E-400SB
DDR2 DRAM, 64MX72, 0.6ns, CMOS, PBGA208Manufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation's W3H64M72E-400SB is a high-performance DDR2 DRAM component from the W3H64M72 series. This memory device offers a density of 64M x 72 bits, providing a total capacity of 4.8 Gbit. It features a maximum access time of 0.6ns and operates using CMOS technology. The component supports multi-bank page burst access modes and includes auto and self-refresh functionalities. Packaged in a 208-ball PBGA (R-PBGA-B208) with a rectangular shape, it is designed for surface mounting. The operating voltage range is between 1.70V and 1.90V, nominal at 1.8V. This memory component is well-suited for demanding applications within the telecommunications, computing, and industrial sectors.
Additional Information
Series: W3H64M72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | MULTI BANK PAGE BURST |
| Access_Time_Max | 0.6000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-PBGA-B208 |
| Memory_Density | 4831838208.0000000000000000 |
| Memory_IC_Type | DDR2 DRAM |
| Memory_Organization | 64MX72 |
| Memory_Width | 72 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 208 |
| Number_of_Words | 67108864.0000000000000000 |
| Number_of_Words_Code | 64M |
| Operating_Mode | Synchronous |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 1.90000 |
| Supply_Voltage_Min | 1.70000 |
| Supply_Voltage_Nom | 1.8 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Position | Bottom |
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