W3H32M72E-400SBI
DDR DRAM Module, 32MX72, 0.6ns, CMOS, PBGA208Manufacturer: Microsemi Corporation
Categories: DRAMs
Quality Control: Learn More
Microsemi Corporation W3H32M72E-400SBI is a DDR DRAM module offering a memory organization of 32Mx72, resulting in a total memory density of 2415919104 bits. This component operates at a maximum clock frequency of 200 MHz, with an access time of 0.6ns, utilizing CMOS technology. The module features common I/O and 3-state output characteristics, packaged in a rectangular PBGA208 (R-PBGA-B208) with a terminal pitch of 1.00 mm. Designed for surface mounting, it operates within a temperature range of -40°C to 85°C and requires a nominal supply voltage of 1.8V. This component is suitable for applications in telecommunications, industrial control systems, and military/aerospace.
Additional Information
Series: W3H32RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 0.6000000000000000 |
| Clock_Frequency_Max | 200.00000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PBGA-B208 |
| Memory_Density | 2415919104.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 32MX72 |
| Memory_Width | 72 |
| Number_of_Terminals | 208 |
| Number_of_Words | 33554432.0000000000000000 |
| Number_of_Words_Code | 32M |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Equivalence_Code | BGA208,11X19,40 |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Refresh_Cycles | 8192 |
| Standby_Current_Max | 0.035000000000000 |
| Supply_Current_Max | 1700.000000000000000 |
| Supply_Voltage_Nom | 1.8 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.000 |
| Terminal_Position | Bottom |
Request a Quote
Clients Also Buy
W3H32M72E-667SBM
DDR DRAM Module, 32MX72, 0.45ns, CMOS, PBGA208
W3H32M72E-533SBI
DDR DRAM Module, 32MX72, 0.5ns, CMOS, PBGA208
W3EG72125S335JD3SG
DDR DRAM Module, 128MX72, 0.7ns, CMOS