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W3H32M64E-667SBC

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W3H32M64E-667SBC

DDR2 DRAM, 32MX64, 0.65ns, CMOS, PBGA208

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation W3H32M64E-667SBC is a DDR2 DRAM component from the W3H32M64 series, featuring a 32M x 64 memory organization for a total density of 2Gb. This device operates with a maximum clock frequency of 333 MHz, delivering an access time of 0.65 ns. It employs a CMOS technology and is housed in a 208-ball PBGA package (JESD30 code R-PBGA-B208) with a 1.00 mm terminal pitch. The W3H32M64E-667SBC supports four-bank page burst access mode and includes auto/self-refresh capabilities with 8192 refresh cycles. Operating voltage ranges from 1.7V to 1.9V, with a nominal value of 1.8V. This component is suitable for applications in networking, industrial automation, and telecommunications.

Additional Information

Series: W3H32M64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max0.6500000000000000
Additional_FeatureAUTO/SELF REFRESH
Clock_Frequency_Max333.00000
I_O_TypeCOMMON
JESD_30_CodeR-PBGA-B208
Memory_Density2147483648.0000000000000000
Memory_IC_TypeDDR2 DRAM
Memory_Organization32MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals208
Number_of_Words33554432.0000000000000000
Number_of_Words_Code32M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_Equivalence_CodeBGA208,11X19,40
Package_ShapeRectangular
Package_StyleGRID ARRAY
Refresh_Cycles8192
Self_RefreshYes
Supply_Current_Max1360.000000000000000
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountYes
Terminal_FormBall
Terminal_Pitch1.000
Terminal_PositionBottom

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