W3H264M16E-667SBM
DDR2 DRAM, 128MX16, 0.65ns, CMOS, PBGA79Manufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation W3H264M16E-667SBM is a 2Gb DDR2 DRAM device with a 128Mx16 memory organization, providing a 16-bit data bus. This component operates at high speeds with a maximum access time of 0.65ns and a nominal supply voltage of 1.8V, ranging from 1.7V to 1.9V. It supports dual bank page burst access modes and features auto/self refresh capabilities. The W3H264M16E-667SBM is fabricated using CMOS technology and is housed in a 79-ball PBGA (R-PBGA-B79) package suitable for surface mounting. Its operating temperature range is from -55°C to +125°C. Applications for this high-performance memory component include telecommunications, industrial control systems, and embedded computing platforms.
Additional Information
Series: W3H264M16RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 14.1000 |
| Width | 11.1000 |
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Access_Time_Max | 0.6500000000000000 |
| Additional_Feature | AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED |
| JESD_30_Code | R-PBGA-B79 |
| Memory_Density | 2147483648.0000000000000000 |
| Memory_IC_Type | DDR2 DRAM |
| Memory_Organization | 128MX16 |
| Memory_Width | 16 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 79 |
| Number_of_Words | 134217728.0000000000000000 |
| Number_of_Words_Code | 128M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Seated_Height_Max | 2.8700 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 1.90000 |
| Supply_Voltage_Min | 1.70000 |
| Supply_Voltage_Nom | 1.8 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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