W3H264M16E-667BM
DDR2 DRAM, 128MX16, CMOS, PBGA79Manufacturer: Microsemi Corporation
Categories: DRAMs
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The Microsemi Corporation W3H264M16E-667BM is a DDR2 DRAM component from the W3H264M16 series. This memory IC offers a 128Mx16 organization, providing a total memory density of 2Gbit. Operating in synchronous mode with a dual bank page burst access, it utilizes CMOS technology. Key features include auto/self refresh capabilities, LG-MAX, WD-MAX, and seated HT-calculated functionality. The component operates within a temperature range of -55°C to 125°C and requires a supply voltage between 1.7V and 1.9V, with a nominal 1.8V. It is housed in a 79-ball PBGA (R-PBGA-B79) package with a 1.27mm terminal pitch, suitable for surface mounting. This device is commonly found in industrial and telecommunications applications.
Additional Information
Series: W3H264M16RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 14.1000 |
| Width | 11.1000 |
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED |
| JESD_30_Code | R-PBGA-B79 |
| Memory_Density | 2147483648.0000000000000000 |
| Memory_IC_Type | DDR2 DRAM |
| Memory_Organization | 128MX16 |
| Memory_Width | 16 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 79 |
| Number_of_Words | 134217728.0000000000000000 |
| Number_of_Words_Code | 128M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Seated_Height_Max | 2.8700 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 1.90000 |
| Supply_Voltage_Min | 1.70000 |
| Supply_Voltage_Nom | 1.8 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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