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W3H264M16E-533SBM

DDR2 DRAM, 128MX16, 0.65ns, CMOS, PBGA79

Manufacturer: Microsemi Corporation

Categories: DRAMs

Quality Control: Learn More

Microsemi Corporation W3H264M16E-533SBM is a DDR2 DRAM component from the W3H264M16 series. This device features a memory organization of 128M x 16 bits, providing a total density of 2147483648 bits. It supports dual bank page burst access mode with a maximum access time of 0.65 nanoseconds and operates synchronously. The W3H264M16E-533SBM is constructed using CMOS technology and is packaged in a 79-ball PBGA (R-PBGA-B79) with a terminal pitch of 1.27mm. Key features include auto/self refresh, LG-MAX, WD-MAX, and HT-calculated seated height. This component is suitable for applications requiring robust memory solutions, including industrial and telecommunications equipment. It operates within a supply voltage range of 1.7V to 1.9V and an extended temperature range from -55°C to 125°C.

Additional Information

Series: W3H264M16RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length14.1000
Width11.1000
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max0.6500000000000000
Additional_FeatureAUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED
JESD_30_CodeR-PBGA-B79
Memory_Density2147483648.0000000000000000
Memory_IC_TypeDDR2 DRAM
Memory_Organization128MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals79
Number_of_Words134217728.0000000000000000
Number_of_Words_Code128M
Operating_ModeSynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-55.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_ShapeRectangular
Package_StyleGRID ARRAY
Seated_Height_Max2.8700
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountYes
Terminal_FormBall
Terminal_Pitch1.270
Terminal_PositionBottom

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