W3H128M64E2-533SBC
DDR2 DRAM, 128MX64, 0.5ns, CMOS, PBGA208Manufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation's W3H128M64E2-533SBC is a DDR2 DRAM component from the W3H128M64 series. This 128M x 64 memory device offers a maximum access time of 0.5ns and operates using CMOS technology. Designed for high-performance applications, it features multi-bank page burst access mode and supports auto/self refresh functionalities. Additional features include LG-MAX and WD-MAX. The component is housed in a 208-ball PBGA package (R-PBGA-B60) with a terminal pitch of 1.000mm. Operating within a temperature range of 0°C to 70°C, it requires a supply voltage between 1.70V and 1.90V, with a nominal value of 1.8V. This surface-mount device is suitable for use in telecommunications, networking, and industrial automation sectors.
Additional Information
Series: W3H128M64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.1500 |
| Width | 16.1500 |
| Technology | CMOS |
| Access_Mode | MULTI BANK PAGE BURST |
| Access_Time_Max | 0.5000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH; LG-MAX; WD-MAX |
| JESD_30_Code | R-PBGA-B60 |
| Memory_Density | 8589934592.0000000000000000 |
| Memory_IC_Type | DDR2 DRAM |
| Memory_Organization | 128MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 208 |
| Number_of_Words | 134217728.0000000000000000 |
| Number_of_Words_Code | 128M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Seated_Height_Max | 5.1500 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 1.90000 |
| Supply_Voltage_Min | 1.70000 |
| Supply_Voltage_Nom | 1.8 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.000 |
| Terminal_Position | Bottom |
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