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W3H128M64E-667SBI

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W3H128M64E-667SBI

DDR2 DRAM, 128MX64, 0.45ns, CMOS, PBGA208

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation W3H128M64E-667SBI is a DDR2 DRAM component from the W3H128M64 series. This memory IC features a 128M x 64 organization, providing a total density of 8Gb. It operates with a maximum access time of 0.45ns and utilizes CMOS technology. The device supports synchronous operation with multi-bank page burst access mode. Key features include auto/self refresh, LG-MAX, and WD-MAX functionalities. Packaged in a 208-ball PBGA (R-PBGA-B208) with a terminal pitch of 1.00mm, this surface-mount component has dimensions of 22.15mm x 16.15mm. Operating temperature range is -40°C to +85°C, with a nominal supply voltage of 1.8V (1.7V to 1.9V). This component is suitable for applications in networking, telecommunications, and industrial automation.

Additional Information

Series: W3H128M64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length22.1500
Width16.1500
TechnologyCMOS
Access_ModeMULTI BANK PAGE BURST
Access_Time_Max0.4500000000000000
Additional_FeatureAUTO/SELF REFRESH; LG-MAX; WD-MAX
JESD_30_CodeR-PBGA-B208
Memory_Density8589934592.0000000000000000
Memory_IC_TypeDDR2 DRAM
Memory_Organization128MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals208
Number_of_Words134217728.0000000000000000
Number_of_Words_Code128M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_ShapeRectangular
Package_StyleGRID ARRAY
Seated_Height_Max5.1500
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountYes
Terminal_FormBall
Terminal_Pitch1.000
Terminal_PositionBottom

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