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W3EG7266S335BD4F

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W3EG7266S335BD4F

DDR DRAM Module, 64MX72, 0.7ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

Quality Control: Learn More

The Microsemi Corporation W3EG7266S335BD4F is a DDR DRAM module from the W3EG7266 series. This module features a 64M x 72 memory organization, delivering a total memory density of 4.83 Gb. It operates with a synchronous interface and supports a four-bank page burst access mode, offering a maximum access time of 0.7 ns. Key functionalities include auto and self-refresh capabilities, ensuring data integrity. The module operates within a supply voltage range of 2.3V to 2.7V, with a nominal voltage of 2.5V, and has an operating temperature range from 0°C to 70°C. This component is utilized in applications requiring high-speed data storage and retrieval, such as telecommunications infrastructure, industrial computing, and high-performance embedded systems.

Additional Information

Series: W3EG7266RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max0.7000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N200
Memory_Density4831838208.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization64MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals200
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max2.70000
Supply_Voltage_Min2.30000
Supply_Voltage_Nom2.5
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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