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W3EG7264S403D3

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W3EG7264S403D3

DDR DRAM Module, 64MX72, 0.7ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation W3EG7264S403D3 is a DDR DRAM Module from the W3EG7264 series. This component features a memory organization of 64M words by 72 bits, providing a total memory density of 512 Megabytes. It operates with a maximum access time of 0.7 nanoseconds and utilizes CMOS technology. The module supports synchronous operation with a four-bank page burst access mode and includes auto/self refresh capabilities. Designed for applications requiring high-speed data access, this DRAM module is suitable for use in telecommunications, industrial automation, and computing systems. It operates within a temperature range of 0°C to 70°C and requires a supply voltage between 2.4V and 2.7V, with a nominal value of 2.6V. The component is packaged in a 184-pin DIMM configuration.

Additional Information

Series: W3EG7264RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max0.7000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N184
Memory_Density4831838208.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization64MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals184
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max2.70000
Supply_Voltage_Min2.40000
Supply_Voltage_Nom2.6
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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