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W3EG7264S335BD4MG

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W3EG7264S335BD4MG

DDR DRAM Module, 64MX72, 0.7ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation W3EG7264S335BD4MG is a DDR DRAM module from the W3EG7264 series. This component features a memory organization of 64Mx72 with a maximum access time of 0.7ns. It operates in synchronous dual bank page burst mode and supports auto/self refresh capabilities. The module is built using CMOS technology and has a supply voltage range of 2.3V to 2.7V, with a nominal voltage of 2.5V. Operating temperatures range from 0.0°C to 70.0°C. This 200-terminal device, packaged as a DIMM, is suitable for applications in data storage, networking equipment, and industrial control systems requiring high-speed memory solutions. Its memory density is approximately 4.83 Gbit.

Additional Information

Series: W3EG7264RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max0.7000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N200
Memory_Density4831838208.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization64MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals200
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max2.70000
Supply_Voltage_Min2.30000
Supply_Voltage_Nom2.5
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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