W3EG7264S335BD4M
DDR DRAM Module, 64MX72, 0.7ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation W3EG7264S335BD4M is a DDR DRAM Module from the W3EG7264 series. This component offers a memory organization of 64M x 72 bits, providing a total density of 4.83 Gb. It features a maximum access time of 0.7 nanoseconds and operates with a synchronous, dual bank page burst access mode. The module supports auto and self-refresh functionalities, enhancing power management. Operating within a temperature range of 0°C to 70°C, it requires a supply voltage between 2.3V and 2.7V, with a nominal value of 2.5V. This CMOS technology-based module is utilized in applications such as data storage, networking equipment, and industrial control systems.
Additional Information
Series: W3EG7264RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Access_Time_Max | 0.7000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N200 |
| Memory_Density | 4831838208.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 64MX72 |
| Memory_Width | 72 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 200 |
| Number_of_Words | 67108864.0000000000000000 |
| Number_of_Words_Code | 64M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 2.70000 |
| Supply_Voltage_Min | 2.30000 |
| Supply_Voltage_Nom | 2.5 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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