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W3EG7264S335BD4

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W3EG7264S335BD4

DDR DRAM Module, 64MX8, 0.7ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation W3EG7264S335BD4 is a DDR DRAM Module from the W3EG7264 series. This component features a memory organization of 64M x 8, delivering a total memory density of 536,870,912 bits. It operates in synchronous mode with a maximum access time of 0.7ns and utilizes CMOS technology. The module supports dual bank page burst access mode and includes auto/self refresh capabilities. Additional features encompass a seated height of 31.75mm and a maximum width of 6.35mm. Operating within a temperature range of 0°C to 70°C, it requires a supply voltage between 2.3V and 2.7V, with a nominal voltage of 2.5V. This module is suitable for applications in networking, telecommunications, and industrial automation where high-speed memory is critical.

Additional Information

Series: W3EG7264RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length67.5600
Width6.3500
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max0.7000000000000000
Additional_FeatureAUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX
JESD_30_CodeR-XDMA-N240
Memory_Density536870912.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization64MX8
Memory_Width8
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals200
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Seated_Height_Max31.7500
Self_RefreshYes
Supply_Voltage_Max2.70000
Supply_Voltage_Min2.30000
Supply_Voltage_Nom2.5
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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