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W3EG7264S265BD4SG

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W3EG7264S265BD4SG

DDR DRAM Module, 64MX72, 0.75ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation W3EG7264S265BD4SG is a DDR DRAM module from the W3EG7264 series. This component features a memory organization of 64Mx72, providing a total memory density of approximately 4.83 Gbits. It operates in a synchronous, dual bank page burst mode with a maximum access time of 0.75 ns. The module supports auto and self-refresh functionalities and is built using CMOS technology. Operating within a temperature range of 0°C to 70°C, it requires a supply voltage between 2.3V and 2.7V, with a nominal value of 2.5V. This component's specifications make it suitable for applications in the telecommunications and industrial sectors. The package style is a 200-terminal microelectronic assembly in a DIMM form factor.

Additional Information

Series: W3EG7264RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max0.7500000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N200
Memory_Density4831838208.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization64MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals200
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max2.70000
Supply_Voltage_Min2.30000
Supply_Voltage_Nom2.5
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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