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W3EG7264S265BD4S

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W3EG7264S265BD4S

DDR DRAM Module, 64MX72, 0.75ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation W3EG7264S265BD4S is a DDR DRAM Module from the W3EG7264 series. This module offers a memory organization of 64MX72, providing a total density of 4.83 Gbit. It features a maximum access time of 0.75 ns and operates using CMOS technology. Key functionalities include Dual Bank Page Burst access mode and support for Auto/Self Refresh. The module operates within a temperature range of 0°C to 70°C and requires a supply voltage between 2.3V and 2.7V, with a nominal voltage of 2.5V. This component is suitable for applications in computing, networking, and industrial automation where high-speed memory is critical. The package is a 200-terminal DIMM.

Additional Information

Series: W3EG7264RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max0.7500000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N200
Memory_Density4831838208.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization64MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals200
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max2.70000
Supply_Voltage_Min2.30000
Supply_Voltage_Nom2.5
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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