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W3EG7264S263JD3

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W3EG7264S263JD3

DDR DRAM Module, 64MX72, 0.75ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation W3EG7264S263JD3 is a DDR DRAM module from the W3EG7264 series. This component features a 64M x 72 memory organization, delivering a total memory density of 4.83 Gbits. It operates with a maximum access time of 0.75 ns and utilizes CMOS technology. The module supports a four-bank page burst access mode and includes auto/self-refresh capabilities, with self-refresh functionality enabled. It operates synchronously and is housed in a 184-terminal DIMM package. The operating temperature range is 0°C to 70°C, with a supply voltage range of 2.3V to 2.7V, nominally 2.5V. This component is suitable for applications in server, workstation, and high-performance computing environments.

Additional Information

Series: W3EG7264RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max0.7500000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N184
Memory_Density4831838208.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization64MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals184
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max2.70000
Supply_Voltage_Min2.30000
Supply_Voltage_Nom2.5
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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