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W3EG72129S335JD3

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W3EG72129S335JD3

DDR DRAM Module, 128MX8, 0.7ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation's W3EG72129S335JD3 is a DDR DRAM Module with a 128MX8 memory organization, offering a high-speed 0.7ns access time. This CMOS component operates in synchronous mode and supports dual bank page burst access. Key features include auto/self refresh capabilities, LG-MAX, and WD-MAX. The module utilizes a S-PBGA-B107 package and is designed for surface mounting with a thin profile and fine pitch. Its density is 1073741824 bits, with a data width of 8 bits. The operating temperature range is 0°C to 70°C, with a nominal supply voltage of 2.5V (2.3V to 2.7V). This component finds application in data processing, telecommunications, and industrial control systems.

Additional Information

Series: W3EG72129RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width3.8100
TechnologyCMOS
Length133.4800
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max0.7000000000000000
Additional_FeatureAUTO/SELF REFRESH; LG-MAX; WD-MAX
JESD_30_CodeS-PBGA-B107
Memory_Density1073741824.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization128MX8
Memory_Width8
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals184
Number_of_Words134217728.0000000000000000
Number_of_Words_Code128M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleGRID ARRAY, THIN PROFILE, FINE PITCH
Seated_Height_Max30.4800
Self_RefreshYes
Supply_Voltage_Max2.70000
Supply_Voltage_Min2.30000
Supply_Voltage_Nom2.5
Surface_MountYes
Terminal_FormNO LEAD
Terminal_PositionBottom

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