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W3EG72129S265JD3

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W3EG72129S265JD3

DDR DRAM Module, 128MX8, 0.75ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

Quality Control: Learn More

The Microsemi Corporation W3EG72129S265JD3 is a DDR DRAM module featuring a 128M x 8 memory organization, providing a total memory density of 1073.74 MB. This CMOS component operates in synchronous mode with a maximum access time of 0.75 ns. It supports dual bank page burst access modes and includes auto/self-refresh capabilities, along with LG-MAX and WD-MAX features. The module is designed for surface mounting and utilizes a standard DIMM package, measuring 133.48 mm in length and 3.81 mm in width. Operating voltage ranges from 2.30 V to 2.70 V, with a nominal value of 2.5 V. This component is suitable for applications within the telecommunications, industrial, and computing sectors. The JEDEC code for this device is S-PBGA-B107.

Additional Information

Series: W3EG72129RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width3.8100
TechnologyCMOS
Length133.4800
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max0.7500000000000000
Additional_FeatureAUTO/SELF REFRESH; LG-MAX; WD-MAX
JESD_30_CodeS-PBGA-B107
Memory_Density1073741824.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization128MX8
Memory_Width8
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals184
Number_of_Words134217728.0000000000000000
Number_of_Words_Code128M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleGRID ARRAY, THIN PROFILE, FINE PITCH
Seated_Height_Max30.4800
Self_RefreshYes
Supply_Voltage_Max2.70000
Supply_Voltage_Min2.30000
Supply_Voltage_Nom2.5
Surface_MountYes
Terminal_FormNO LEAD
Terminal_PositionBottom

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