W3EG72129S263JD3
DDR DRAM Module, 128MX8, 0.75ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation W3EG72129 series DDR DRAM Module, part number W3EG72129S263JD3. This CMOS component offers a memory organization of 128Mx8 with a maximum access time of 0.75ns. It operates in synchronous mode with a dual bank page burst access mode. Key features include auto/self refresh, LG-MAX, and WD-MAX capabilities. The module supports a supply voltage range of 2.30V to 2.70V, with a nominal value of 2.5V. Operating temperature ranges from 0°C to 70°C. This surface-mount component utilizes a Rectangular, Thin Profile, Fine Pitch, Grid Array package. Its memory density is 1073741824 bits. Applications for this type of memory module can be found in industrial and defense systems.
Additional Information
Series: W3EG72129RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 133.4800 |
| Width | 3.8100 |
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Access_Time_Max | 0.7500000000000000 |
| Additional_Feature | AUTO/SELF REFRESH; LG-MAX; WD-MAX |
| JESD_30_Code | S-PBGA-B107 |
| Memory_Density | 1073741824.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 128MX8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 184 |
| Number_of_Words | 134217728.0000000000000000 |
| Number_of_Words_Code | 128M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY, THIN PROFILE, FINE PITCH |
| Seated_Height_Max | 30.4800 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 2.70000 |
| Supply_Voltage_Min | 2.30000 |
| Supply_Voltage_Nom | 2.5 |
| Surface_Mount | Yes |
| Terminal_Form | NO LEAD |
| Terminal_Position | Bottom |
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