W3EG72128S262D3S
DDR DRAM Module, 128MX72, 0.75ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
Quality Control: Learn More
The Microsemi Corporation W3EG72128S262D3S is a DDR DRAM Module from the W3EG72128 series, offering a memory organization of 128M x 72. This module operates with CMOS technology, featuring a maximum access time of 0.75ns. Its synchronous operating mode supports dual bank page burst access and includes auto/self-refresh capabilities. The module is designed for a supply voltage range of 2.30V to 2.70V, with a nominal voltage of 2.5V. Operating temperatures are specified from 0.0°C to 70.0°C. This component is commonly utilized in networking infrastructure, data storage, and high-performance computing applications.
Additional Information
Series: W3EG72128RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Access_Time_Max | 0.7500000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N184 |
| Memory_Density | 9663676416.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 128MX72 |
| Memory_Width | 72 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 184 |
| Number_of_Words | 134217728.0000000000000000 |
| Number_of_Words_Code | 128M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 2.70000 |
| Supply_Voltage_Min | 2.30000 |
| Supply_Voltage_Nom | 2.5 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
Request a Quote
Clients Also Buy
W3EG72128S262BD4-SG
DDR DRAM Module, 128MX72, 0.75ns, CMOS
W3EG72128S335AD4-SG
DDR DRAM Module, 128MX72, 0.7ns, CMOS
W3EG72128S202BD4-S
DDR DRAM Module, 128MX72, 0.75ns, CMOS