W3EG6466S265AD4M
DDR DRAM Module, 64MX64, 0.75ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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The Microsemi Corporation W3EG6466 series DDR DRAM module, part number W3EG6466S265AD4M, offers a memory organization of 64M x 64 bits, providing a total memory density of 4Gb. This component operates using CMOS technology and features a maximum access time of 0.75ns. The module supports dual bank page burst access mode and includes auto and self-refresh functionalities. Its operating temperature range is from 0°C to 70°C, with a nominal supply voltage of 2.5V, ranging from 2.3V to 2.7V. This synchronous memory component is commonly utilized in embedded systems, industrial automation, and high-performance computing applications. The package style is a 200-terminal DIMM.
Additional Information
Series: W3EG6466RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Access_Time_Max | 0.7500000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N200 |
| Memory_Density | 4294967296.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 64MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 200 |
| Number_of_Words | 67108864.0000000000000000 |
| Number_of_Words_Code | 64M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 2.70000 |
| Supply_Voltage_Min | 2.30000 |
| Supply_Voltage_Nom | 2.5 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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