W3EG6466S202AD4SG
DDR DRAM Module, 64MX64, 0.75ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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The Microsemi Corporation W3EG6466 DDR DRAM Module, part number W3EG6466S202AD4SG, offers a 64Mx64 organization with a maximum access time of 0.75ns. This CMOS technology component operates synchronously with a dual bank page burst access mode. Key features include auto/self-refresh capabilities, supporting memory densities of 4294967296 bits. The module operates within a temperature range of 0°C to 70°C and requires a supply voltage between 2.3V and 2.7V, with a nominal voltage of 2.5V. It is presented in a 200-terminal DIMM package. This component is suitable for applications in networking, industrial automation, and defense systems.
Additional Information
Series: W3EG6466RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Access_Time_Max | 0.7500000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N200 |
| Memory_Density | 4294967296.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 64MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 200 |
| Number_of_Words | 67108864.0000000000000000 |
| Number_of_Words_Code | 64M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 2.70000 |
| Supply_Voltage_Min | 2.30000 |
| Supply_Voltage_Nom | 2.5 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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