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W3EG6464S202BD4

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W3EG6464S202BD4

DDR DRAM Module, 64MX64, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation W3EG6464S202BD4 is a DDR DRAM module from the W3EG6464 series. This component features a 64M x 64 memory organization, providing a total density of 4Gb. It operates in synchronous mode with a four-bank page burst access mode. The module supports auto and self-refresh functions. Designed with CMOS technology, it operates within a temperature range of 0°C to 70°C and utilizes a supply voltage of 2.5V nominal, with a range of 2.3V to 2.7V. The package is a 200-terminal DIMM with a rectangular shape and dual in-line package style. This component is suitable for applications in networking, industrial automation, and computing systems requiring high-speed data access and storage.

Additional Information

Series: W3EG6464RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N200
Memory_Density4294967296.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization64MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals200
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max2.70000
Supply_Voltage_Min2.30000
Supply_Voltage_Nom2.5
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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