W3EG6462S403D3
DDR DRAM Module, 64MX64, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation W3EG6462S403D3 is a DDR DRAM module with a 64MX64 organization, offering a total memory density of 4294967296 bits. This CMOS component operates in synchronous mode with a dual bank page burst access mode. Key features include auto/self refresh capabilities and a nominal supply voltage of 2.6V, with a range of 2.5V to 2.7V. The module is housed in a 184-terminal DIMM package, designed for through-hole mounting. Operating within a temperature range of 0°C to 70°C, this component is suitable for applications requiring high-speed data buffering and storage, commonly found in telecommunications infrastructure, industrial automation, and data processing systems. The W3EG6462 series leverages advanced DRAM technology for reliable performance.
Additional Information
Series: W3EG6462RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N184 |
| Memory_Density | 4294967296.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 64MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 184 |
| Number_of_Words | 67108864.0000000000000000 |
| Number_of_Words_Code | 64M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 2.70000 |
| Supply_Voltage_Min | 2.50000 |
| Supply_Voltage_Nom | 2.6 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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