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W3EG6437S403D4MG

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W3EG6437S403D4MG

DDR DRAM Module, 32MX64, 0.7ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation W3EG6437 DDR DRAM Module, part number W3EG6437S403D4MG, offers a 32Mx64 memory organization with a maximum access time of 0.7ns. This CMOS technology module operates synchronously with a dual bank page burst access mode. Key features include auto and self-refresh capabilities, supporting a memory density of 2Gbit. The module is designed for a supply voltage range of 2.3V to 2.7V, with a nominal 2.5V. Operating temperatures range from 0°C to 70°C. This component is suitable for applications in networking, industrial automation, and consumer electronics.

Additional Information

Series: W3EG6437RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max0.7000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N200
Memory_Density2147483648.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization32MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals200
Number_of_Words33554432.0000000000000000
Number_of_Words_Code32M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max2.70000
Supply_Voltage_Min2.30000
Supply_Voltage_Nom2.5
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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