W3EG6433S262BD4
DDR DRAM Module, 32MX64, 0.75ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
Quality Control: Learn More
Microsemi Corporation presents the W3EG6433S262BD4, a DDR DRAM module from the W3EG6433 series. This component offers a memory organization of 32Mx64, providing 2Gb of total memory capacity. Featuring a maximum access time of 0.75ns and CMOS technology, it operates in synchronous mode with a four-bank page burst access mode. The module supports auto and self-refresh functionalities, operating within a temperature range of 0°C to 70°C and a supply voltage of 2.3V to 2.7V, with a nominal value of 2.5V. This device is suitable for applications in networking, telecommunications, and industrial automation. It utilizes a 200-terminal DIMM package.
Additional Information
Series: W3EG6433RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 0.7500000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N200 |
| Memory_Density | 2147483648.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 32MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 200 |
| Number_of_Words | 33554432.0000000000000000 |
| Number_of_Words_Code | 32M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 2.70000 |
| Supply_Voltage_Min | 2.30000 |
| Supply_Voltage_Nom | 2.5 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
Request a Quote
Clients Also Buy
W3EG6433S265JD3
DDR DRAM Module, 32MX64, 0.75ns, CMOS
W3EG6433S335AD4
DDR DRAM Module, 32MX64, 0.7ns, CMOS
W3EG6433S335BD4
DDR DRAM Module, 32MX64, 0.7ns, CMOS