W3EG64255S202JD3M
DDR DRAM Module, 256MX64, 0.8ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation W3EG64255 DDR DRAM Module, part number W3EG64255S202JD3M, offers a 256MX64 memory organization with a maximum access time of 0.8ns. This CMOS component operates synchronously with a dual bank page burst access mode. The module supports auto and self-refresh functions, utilizing a 2.5V nominal supply voltage (2.3V to 2.7V range). Designed for demanding applications, this 184-terminal DIMM package is suitable for use in networking, telecommunications, and industrial automation sectors. Its memory density is 17.18 Gbits, with a memory width of 64 bits. Operating temperature ranges from 0°C to 70°C.
Additional Information
Series: W3EG64255RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Access_Time_Max | 0.8000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N184 |
| Memory_Density | 17179869184.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 256MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 184 |
| Number_of_Words | 268435456.0000000000000000 |
| Number_of_Words_Code | 256M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 2.70000 |
| Supply_Voltage_Min | 2.30000 |
| Supply_Voltage_Nom | 2.5 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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