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W3EG6418S263JD3

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W3EG6418S263JD3

DDR DRAM Module, 16MX64, 0.75ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation W3EG6418S263JD3 is a DDR DRAM Module from the W3EG6418 series. This component features a memory organization of 16Mx64, providing a total memory density of 1073.74 Mb. It operates synchronously with a maximum access time of 0.75 ns and utilizes CMOS technology. Key functionalities include a four-bank page burst access mode and support for auto/self-refresh operations. The module operates within a temperature range of 0°C to 70°C and has a nominal supply voltage of 2.5V, with a maximum of 2.70V. It is packaged in an 184-terminal DIMM format. This component is suitable for applications in the computing and networking industries.

Additional Information

Series: W3EG6418RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max0.7500000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N184
Memory_Density1073741824.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization16MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals184
Number_of_Words16777216.0000000000000000
Number_of_Words_Code16m
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max2.70000
Supply_Voltage_Min2.30000
Supply_Voltage_Nom2.5
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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