W3EG6418S263D3
DDR DRAM Module, 16MX64, 0.75ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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The Microsemi Corporation W3EG6418S263D3 is a DDR DRAM module from the W3EG6418 series, featuring a 16M x 64 memory organization. This component operates with CMOS technology and offers a maximum access time of 0.75 ns. Its architecture supports a four-bank page burst mode and includes auto/self-refresh capabilities. The module provides a memory density of 1073741824 bits, functioning in synchronous mode. It is designed for operation within a temperature range of 0.0°C to 70.0°C and utilizes a supply voltage ranging from 2.300V to 2.700V, with a nominal value of 2.5V. Applications for this type of component include computing, networking, and industrial systems. The package style is a microelectronic assembly, specifically a DIMM with 184 terminals.
Additional Information
Series: W3EG6418RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 0.7500000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N184 |
| Memory_Density | 1073741824.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 16MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 184 |
| Number_of_Words | 16777216.0000000000000000 |
| Number_of_Words_Code | 16m |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 2.70000 |
| Supply_Voltage_Min | 2.30000 |
| Supply_Voltage_Nom | 2.5 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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