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W3EG64128S265D3M

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W3EG64128S265D3M

DDR DRAM Module, 128MX64, 0.75ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation W3EG64128S265D3M is a DDR DRAM Module from the W3EG64128 series. This component features a memory organization of 128Mx64 and a maximum access time of 0.75ns, operating with CMOS technology. It supports dual bank page burst access modes and incorporates auto/self-refresh functionality. The module operates within a temperature range of 0.0°C to 70.0°C and requires a supply voltage between 2.30V and 2.70V, with a nominal value of 2.5V. Designed for synchronous operation, this 184-terminal component is utilized in applications requiring high-speed data buffering and storage, commonly found in industrial automation, networking equipment, and embedded systems.

Additional Information

Series: W3EG64128RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max0.7500000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N184
Memory_Density8589934592.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization128MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals184
Number_of_Words134217728.0000000000000000
Number_of_Words_Code128M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max2.70000
Supply_Voltage_Min2.30000
Supply_Voltage_Nom2.5
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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