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W3EG264M64ETSR265JD3MG

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W3EG264M64ETSR265JD3MG

DDR DRAM Module, 128MX64, 0.75ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation W3EG264M64ETSR265JD3MG is a DDR DRAM Module from the W3EG264M64 series. This component offers a memory organization of 128M x 64, providing a total density of 8Gb. It operates with a maximum access time of 0.75ns and utilizes CMOS technology. Key features include Dual Bank Page Burst access mode and Auto/Self Refresh capabilities. The module supports synchronous operation and a supply voltage range of 2.3V to 2.70V, with a nominal operating voltage of 2.5V. Its operating temperature range is from 0°C to 70°C. This component is suitable for applications in computing, networking, and industrial systems requiring high-speed data storage and retrieval.

Additional Information

Series: W3EG264M64RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max0.7500000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N184
Memory_Density8589934592.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization128MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals184
Number_of_Words134217728.0000000000000000
Number_of_Words_Code128M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max2.70000
Supply_Voltage_Min2.30000
Supply_Voltage_Nom2.5
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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