W3EG264M64EFSU262D4ISG
DDR DRAM Module, 128MX64, 0.75ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation W3EG264M64EFSU262D4ISG is a high-performance DDR DRAM module, part of the W3EG264M64 series. This component features a memory organization of 128M x 64, yielding a total density of 8Gb. It supports synchronous operation with a maximum access time of 0.75ns and operates using CMOS technology. Key functionalities include Dual Bank Page Burst access mode and Auto/Self Refresh capabilities, ensuring efficient data handling and power management. Designed for demanding applications, this module is commonly utilized in telecommunications, industrial control systems, and data storage solutions. The module conforms to the R-XDMA-N200 JESD-30 code and operates within a supply voltage range of 2.3V to 2.7V, with a nominal voltage of 2.5V.
Additional Information
Series: W3EG264M64RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Access_Time_Max | 0.7500000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N200 |
| Memory_Density | 8589934592.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 128MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 200 |
| Number_of_Words | 134217728.0000000000000000 |
| Number_of_Words_Code | 128M |
| Operating_Mode | Synchronous |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 2.70000 |
| Supply_Voltage_Min | 2.30000 |
| Supply_Voltage_Nom | 2.5 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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