W3EG2256M72ASSR335BJD3ISG
DDR DRAM Module, 512MX72, 0.7ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation W3EG2256M72ASSR335BJD3ISG. This DDR DRAM Module from the W3EG2256M72 series offers a 512MX72 organization with a maximum access time of 0.7ns. It operates using Synchronous CMOS technology and supports Dual Bank Page Burst access modes. Key features include Auto/Self Refresh capabilities and a nominal supply voltage of 2.5V, with a range of 2.3V to 2.7V. The module is designed for industrial applications, operating within a temperature range of -40°C to 85°C. Its 184-pin package is suitable for high-performance computing, telecommunications, and embedded systems requiring robust memory solutions.
Additional Information
Series: W3EG2256M72RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Access_Time_Max | 0.7000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N184 |
| Memory_Density | 38654705664.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 512MX72 |
| Memory_Width | 72 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 184 |
| Number_of_Words | 536870912.0000000000000000 |
| Number_of_Words_Code | 512M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 2.70000 |
| Supply_Voltage_Min | 2.30000 |
| Supply_Voltage_Nom | 2.5 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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