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W3EG2256M72ASSR262BJD3SG

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W3EG2256M72ASSR262BJD3SG

DDR DRAM Module, 512MX72, 0.7ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation W3EG2256M72ASSR262BJD3SG is a DDR DRAM module from the W3EG2256M72 series. This component features a memory organization of 512M x 72, delivering a total memory density of 36 Gb. It operates in synchronous mode with a maximum access time of 0.7 ns. The module supports dual bank page burst access and includes auto/self refresh functionality. Designed with CMOS technology, it operates within a supply voltage range of 2.3V to 2.7V, with a nominal voltage of 2.5V. The operating temperature range is 0°C to 70°C. This microelectronic assembly is packaged as a 184-terminal DIMM. Applications for this type of component can be found in high-performance computing, networking infrastructure, and industrial automation systems.

Additional Information

Series: W3EG2256M72RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max0.7000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N184
Memory_Density38654705664.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization512MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals184
Number_of_Words536870912.0000000000000000
Number_of_Words_Code512M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max2.70000
Supply_Voltage_Min2.30000
Supply_Voltage_Nom2.5
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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