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W3EG2128M72AFSR403AD3M

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W3EG2128M72AFSR403AD3M

DDR DRAM Module, 256MX72, 0.7ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation W3EG2128M72AFSR403AD3M, a DDR DRAM Module, offers a memory organization of 256M x 72 bits, resulting in a total density of 19.3 Gb. This CMOS component operates with a maximum access time of 0.7ns and supports DUAL BANK PAGE BURST access modes. Key features include AUTO/SELF REFRESH capabilities, a synchronous operating mode, and a standard 184-terminal interface. The module is designed for a supply voltage range of 2.50V to 2.70V, with a nominal value of 2.6V. Operating temperature is specified from 0.0°C to 70.0°C. This component is commonly employed in applications such as high-performance computing, server memory, and networking infrastructure.

Additional Information

Series: W3EG2128M72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max0.7000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N184
Memory_Density19327352832.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization256MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals184
Number_of_Words268435456.0000000000000000
Number_of_Words_Code256M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max2.70000
Supply_Voltage_Min2.50000
Supply_Voltage_Nom2.6
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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