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W3E64M16S-250NBC

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W3E64M16S-250NBC

DDR1 DRAM, 64MX16, 0.8ns, CMOS, PBGA60

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation W3E64M16S-250NBC is a 1Gb DDR1 DRAM component from the W3E64M16 series. This synchronous memory device features a 64M x 16 organization, providing a total memory density of 1073741824 bits. It operates with a maximum access time of 0.8ns and utilizes CMOS technology. The component supports four-bank page burst access mode and includes auto/self-refresh capabilities. Packaged in a 60-ball PBGA (R-PBGA-B60) with a terminal pitch of 1.00mm, it is designed for surface mounting and operates within a supply voltage range of 2.3V to 2.7V, with a nominal voltage of 2.5V. Typical applications for this device include telecommunications infrastructure, networking equipment, and industrial control systems. The operating temperature range is 0°C to 70°C.

Additional Information

Series: W3E64M16RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length12.5000
Width10.0000
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max0.8000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-PBGA-B60
Memory_Density1073741824.0000000000000000
Memory_IC_TypeDDR1 DRAM
Memory_Organization64MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals60
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeLBGA
Package_ShapeRectangular
Package_StyleGRID ARRAY, LOW PROFILE
Seated_Height_Max1.5000
Self_RefreshYes
Supply_Voltage_Max2.70000
Supply_Voltage_Min2.30000
Supply_Voltage_Nom2.5
Surface_MountYes
Terminal_FormBall
Terminal_Pitch1.000
Terminal_PositionBottom

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