W3E64M16S-200NBC
DDR1 DRAM, 64MX16, 0.8ns, CMOS, PBGA60Manufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation's W3E64M16S-200NBC is a DDR1 DRAM component with a 64M x 16 memory organization, providing a total density of 1Gb. This synchronous memory utilizes a CMOS technology and features a maximum access time of 0.8ns. The device supports a four-bank page burst access mode and includes auto/self-refresh capabilities. Its operating voltage range is from 2.3V to 2.7V, with a nominal value of 2.5V. The component is housed in a 60-ball PBGA (R-PBGA-B60) package with a terminal pitch of 1.000mm. Operating within a temperature range of 0°C to 70°C, this memory solution is suitable for applications in networking, industrial control, and consumer electronics.
Additional Information
Series: W3E64M16RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 12.5000 |
| Width | 10.0000 |
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 0.8000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-PBGA-B60 |
| Memory_Density | 1073741824.0000000000000000 |
| Memory_IC_Type | DDR1 DRAM |
| Memory_Organization | 64MX16 |
| Memory_Width | 16 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 60 |
| Number_of_Words | 67108864.0000000000000000 |
| Number_of_Words_Code | 64M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | LBGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY, LOW PROFILE |
| Seated_Height_Max | 1.5000 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 2.70000 |
| Supply_Voltage_Min | 2.30000 |
| Supply_Voltage_Nom | 2.5 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.000 |
| Terminal_Position | Bottom |
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