W3E32M64S-ESB
DDR DRAM Module, 32MX64, CMOS, PBGA219Manufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation W3E32M64S-ESB is a DDR DRAM module offering a memory organization of 32Mx64 and a total memory density of 2Gbit. This component operates in synchronous mode with a four-bank page burst access mode. It supports auto and self-refresh functionalities, simplifying power management. The module utilizes CMOS technology and is packaged in a 219-ball PBGA (JESD-30 Code S-PBGA-B219) with a square body shape. Nominal supply voltage is 2.5V, with a range of 2.3V to 2.7V. Applications for this component are found in industrial automation, telecommunications infrastructure, and high-performance computing systems.
Additional Information
Series: W3E32M64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | S-PBGA-B219 |
| Memory_Density | 2147483648.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 32MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 219 |
| Number_of_Words | 33554432.0000000000000000 |
| Number_of_Words_Code | 32M |
| Operating_Mode | Synchronous |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Square |
| Package_Style | GRID ARRAY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 2.70000 |
| Supply_Voltage_Min | 2.30000 |
| Supply_Voltage_Nom | 2.5 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Position | Bottom |
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